Mark D Evans

Title: Mark D Evans: Innovator in Silicon Substrate Fabrication

Introduction

Mark D Evans is a notable inventor based in Rochester, NY (US). He has made significant contributions to the field of silicon substrate fabrication, holding a total of 4 patents. His work has advanced the technology used in various electronic applications.

Latest Patents

Among his latest patents, one is focused on silicon substrate fabrication. This method involves etching a silicon substrate that includes a first and second surface. A plurality of grooves are etched from the first surface, and a dielectric material is deposited into these grooves. A hole is then etched from the second surface to the dielectric material, with a portion of the hole located between the grooves. Another patent involves an electro-optic modulator with a passivation layer. This patent describes an electro-optic modulator array where electrode pairs are mounted on a substrate. A layer of electronic grade glass is deposited on the substrate and electrodes, enhancing the performance of the modulator.

Career Highlights

Mark D Evans is currently associated with Eastman Kodak Company, where he continues to innovate and develop new technologies. His work has been instrumental in pushing the boundaries of what is possible in silicon substrate applications.

Collaborations

Throughout his career, Evans has collaborated with notable colleagues, including John R Debesis and Wesley H Bacon. These collaborations have contributed to the successful development of his patented technologies.

Conclusion

Mark D Evans is a distinguished inventor whose work in silicon substrate fabrication has led to significant advancements in the field. His contributions continue to influence the technology landscape, showcasing the importance of innovation in electronics.