The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8877605 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 04, 2014

Filed:

Apr. 11, 2013
Applicants:

Yonglin Xie, Pittsford, NY (US);

Carolyn R. Ellinger, Rochester, NY (US);

Mark D. Evans, Rochester, NY (US);

Joseph Jech, Jr., Webster, NY (US);

Inventors:

Yonglin Xie, Pittsford, NY (US);

Carolyn R. Ellinger, Rochester, NY (US);

Mark D. Evans, Rochester, NY (US);

Joseph Jech, Jr., Webster, NY (US);

Assignee:

Eastman Kodak Company, Rochester, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); B41J 2/16 (2006.01);
U.S. Cl.
CPC ...
B41J 2/1626 (2013.01);
Abstract

A method of etching a silicon substrate includes providing a silicon substrate including a first surface and a second surface. A plurality of grooves spaced apart from each other are etched from the first surface of the silicon substrate. A dielectric material is deposited on the first surface of the silicon substrate and into the plurality of grooves. A hole through the silicon substrate is etched from the second surface of the substrate to the dielectric material. A portion of the hole is located between the plurality of grooves.


Find Patent Forward Citations

Xie, Yonglin. (2014). Silicon substrate fabrication (U.S. Patent No. 8877605). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8877605

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