Meridian, ID, United States of America

Mark Bossier


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Mark Bossier - Innovator in Semiconductor Technology

Introduction

Mark Bossier is a notable inventor based in Meridian, Idaho, recognized for his contributions to semiconductor technology. He holds a patent that addresses the manufacturing of collars for under-bump metal structures, which are essential for die-to-die and package-to-package interconnects. His innovative work has implications for the efficiency and effectiveness of semiconductor devices.

Latest Patents

Mark Bossier's patent, titled "Collars for under-bump metal structures and associated systems and methods," focuses on the manufacturing process of collars that surround under-bump metal (UBM) structures. This technology is crucial for creating reliable interconnects in semiconductor dies, which include solid-state components and interconnects extending through the semiconductor material. The collar design enhances the performance of UBM structures, ensuring better electrical coupling and functionality.

Career Highlights

Mark Bossier is associated with Micron Technology Incorporated, a leading company in the semiconductor industry. His work at Micron has allowed him to contribute significantly to advancements in semiconductor manufacturing and design. With one patent to his name, he has established himself as an innovator in this highly technical field.

Collaborations

Mark has collaborated with esteemed colleagues such as Giorgio Mariottini and Sameer S Vadhavkar. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the semiconductor community.

Conclusion

Mark Bossier's contributions to semiconductor technology through his patent and work at Micron Technology Incorporated highlight his role as an important inventor in the field. His innovative designs continue to influence the development of advanced semiconductor devices.

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