Horsham, PA, United States of America

Mark A Halfacre


Average Co-Inventor Count = 3.6

ph-index = 5

Forward Citations = 118(Granted Patents)


Location History:

  • Horsham, PA (US) (1986 - 1987)
  • Portland, ME (US) (1987)
  • Portland, MA (US) (1988)

Company Filing History:


Years Active: 1986-1988

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6 patents (USPTO):Explore Patents

Title: The Innovations of Mark A Halfacre

Introduction

Mark A Halfacre is a notable inventor based in Horsham, PA (US). He has made significant contributions to the field of memory devices, holding a total of six patents. His work focuses on advancing technology in silicon integrated circuits, particularly through innovative memory device designs.

Latest Patents

Halfacre's latest patents include a memory device with interconnected polysilicon layers. This device is based on a field effect transistor that features a floating gate, designed for use in a silicon integrated circuit array of similar memory devices. The innovative design includes only two polysilicon layers, with portions of each layer connected through a via hole in an intervening silicon dioxide layer to form the floating gate.

Career Highlights

Throughout his career, Halfacre has worked with reputable companies such as Solid State Scientific Corporation and Sprague Electric Company. His experience in these organizations has allowed him to refine his skills and contribute to the development of advanced memory technologies.

Collaborations

Some of Halfacre's notable coworkers include David S Pan and Alexander H Owens. Their collaborative efforts have likely played a role in the successful development of his patented technologies.

Conclusion

Mark A Halfacre's contributions to the field of memory devices demonstrate his innovative spirit and technical expertise. His patents reflect a commitment to advancing technology in integrated circuits, making a lasting impact in the industry.

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