The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1987
Filed:
Nov. 07, 1985
Applicant:
Inventors:
David S Pan, Doylestown, PA (US);
Kanak C Sarma, North Wales, PA (US);
Mark A Halfacre, Portland, ME (US);
Alexander H Owens, Pennington, NJ (US);
Brian K Rosier, Jenkintown, PA (US);
Assignee:
Sprague Electric Company, North Adams, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; G11C / ;
U.S. Cl.
CPC ...
357 235 ; 357 41 ; 357 59 ; 365185 ;
Abstract
A memory device, based upon a field effect transistor having a floating gate is constructed for use in a silicon integrated circuit array of similar memory devices. The memory device includes only two polysilicon layers, a portion of each polysilicon layer being connected to each other through a via hole in an intervening silicon dioxide layer to form the floating gate.