North Wales, PA, United States of America

Kanak C Sarma


Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 19(Granted Patents)


Company Filing History:


Years Active: 1987-1988

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2 patents (USPTO):Explore Patents

Title: The Innovations of Kanak C Sarma

Introduction

Kanak C Sarma is a notable inventor based in North Wales, PA (US). She has made significant contributions to the field of memory devices, holding a total of 2 patents. Her work focuses on advancing technology in silicon integrated circuits.

Latest Patents

One of her latest patents is a memory device with interconnected polysilicon layers. This invention is based on a field effect transistor that features a floating gate, designed for use in a silicon integrated circuit array of similar memory devices. The memory device is constructed with only two polysilicon layers, where a portion of each layer is interconnected through a via hole in an intervening silicon dioxide layer to form the floating gate.

Career Highlights

Kanak C Sarma is currently employed at Sprague Electric Company, where she continues to innovate and develop new technologies. Her expertise in memory devices has positioned her as a key player in her field.

Collaborations

Some of her notable coworkers include David S Pan and Mark A Halfacre, who contribute to her innovative projects and research.

Conclusion

Kanak C Sarma's contributions to memory device technology highlight her role as a leading inventor in the field. Her patents reflect her commitment to advancing integrated circuit technology, making her a significant figure in the industry.

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