Pasadena, CA, United States of America

Marina S Leite

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: California Institute of Technology. Active years: 2016.

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Innovations by Marina S. Leite

Introduction

Marina S. Leite is a prominent inventor based in Pasadena, California. She has made significant contributions to the field of materials science, particularly in the development of virtual substrates for epitaxial growth. Her innovative work has garnered attention in both academic and industrial circles.

Latest Patents

Marina S. Leite holds a patent for "Virtual substrates for epitaxial growth and methods of making the same." This patent describes a virtual substrate that includes a handle support and a strain-relieved single crystalline layer on the handle support. The method of making this virtual substrate involves growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support. She has 1 patent to her name.

Career Highlights

Marina is affiliated with the California Institute of Technology, where she continues to advance her research and innovation in materials science. Her work is instrumental in enhancing the understanding and application of epitaxial growth techniques.

Collaborations

Marina has collaborated with notable colleagues, including Harry A. Atwater and Emily C. Warmann. These collaborations have further enriched her research and contributed to the advancement of technology in her field.

Conclusion

Marina S. Leite's contributions to the field of materials science through her innovative patents and collaborations highlight her role as a leading inventor. Her work continues to influence the development of advanced materials and epitaxial growth techniques.

Profile summary based on public USPTO records.
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