Yokkaichi, Japan

Mariko Sumiya

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Kioxia Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mariko Sumiya. Retrieved from https://idiyas.com/inventor/mariko-sumiya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Mariko Sumiya: Innovator in Semiconductor Manufacturing

Introduction

Mariko Sumiya is a prominent inventor based in Yokkaichi, Japan. She has made significant contributions to the field of semiconductor manufacturing. Her innovative approach has led to the development of a unique method that enhances the efficiency and effectiveness of semiconductor devices.

Latest Patents

Mariko Sumiya holds 1 patent for her invention titled "Method for manufacturing semiconductor device." This method involves forming a release layer that includes a first polycrystalline semiconductor layer on a first substrate. It also incorporates a second polycrystalline semiconductor layer with varying impurity concentrations. The process includes anodic chemical conversion to create a porous layer, followed by the formation of device layers that are bonded together.

Career Highlights

Mariko Sumiya is currently employed at Kioxia Corporation, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in advancing the manufacturing processes that are critical to the electronics industry.

Collaborations

Mariko collaborates with Ryosuke Yamamoto, leveraging their combined expertise to drive innovation in their projects.

Conclusion

Mariko Sumiya's contributions to semiconductor manufacturing exemplify her dedication to innovation and excellence in her field. Her work not only enhances technology but also paves the way for future advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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