Company Filing History:
Years Active: 2024-2025
Title: The Innovative Contributions of Mariia Rozhavskaia
Introduction
Mariia Rozhavskaia is a prominent inventor based in Grenoble, France. She has made significant contributions to the field of optoelectronics, holding three patents that showcase her expertise and innovative spirit. Her work focuses on semiconductor structures and manufacturing processes that enhance the performance of electronic devices.
Latest Patents
One of her latest patents is titled "Optoelectronic semiconductor structure comprising a p-type injection layer based on InGaN." This invention involves an optoelectronic semiconductor structure that includes an InGaN-based active layer situated between an n-type injection layer and a p-type injection layer. The p-type injection layer consists of a first InGaN layer with a thickness ranging from 50 to 350 nm, topped with a second layer featuring a GaN surface portion.
Another notable patent is the "Method for manufacturing a growth substrate." This process outlines the fabrication of a growth substrate by preparing a donor substrate that features a crystalline semiconductor surface layer on a seed layer of a carrier. The preparation involves creating the surface layer through multiple alternations of an InGaN primary layer and an AlGaN secondary layer, with specific concentrations and thicknesses selected to achieve a homogeneous AlInGaN layer.
Career Highlights
Mariia Rozhavskaia is currently employed at Soitec, a company renowned for its advancements in semiconductor technology. Her role at Soitec allows her to apply her innovative ideas and contribute to the development of cutting-edge technologies in the industry.
Collaborations
Throughout her career, Mariia has collaborated with notable colleagues, including David Sotta and Benjamin Damilano. These collaborations have fostered a creative environment that encourages the exchange of ideas and the pursuit of groundbreaking inventions.
Conclusion
Mariia Rozhavskaia's contributions to the field of optoelectronics exemplify her dedication to innovation and excellence. Her patents reflect her ability to address complex challenges in semiconductor technology, making her a valuable asset to the industry.