The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Feb. 25, 2020
Applicant:

Soitec, Bernin, FR;

Inventors:

David Sotta, Grenoble, FR;

Mariia Rozhavskaia, Grenoble, FR;

Benjamin Damilano, Nice, FR;

Assignee:

Soitec, Bernin, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/825 (2025.01); H10H 20/812 (2025.01);
U.S. Cl.
CPC ...
H10H 20/825 (2025.01); H10H 20/812 (2025.01);
Abstract

An optoelectronic semiconductor structure comprises an InGaN-based active layer disposed between an n-type injection layer and a p-type injection layer, the p-type injection layer comprising a first InGaN layer having a thickness between 50 and 350 nm and, disposed on the first layer, a second layer having a GaN surface portion.


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