Soitec

Mariia Rozhavskaia

Jean-Marc Bethoux

Benjamin Damilano

David Sotta

An optoelectronic semiconductor structure comprises an InGaN-based active layer disposed between an n-type injection layer and a p-type injection layer, the p-type injection layer comprising a first InGaN layer having a thickness between 50 and 350 nm and, disposed on the first layer, a second layer having a GaN surface portion.

Optoelectronic semiconductor structure comprising a p-type injection layer based on InGaN

A process for fabricating a growth substrate comprises preparing a donor substrate by forming a crystalline semiconductor surface layer on a seed layer of a carrier. This preparation comprises forming the surface layer as a plurality of alternations of an InGaN primary layer and of an AlGaN secondary layer, the indium concentration and the thickness of the primary layers and the aluminum concentration and the thickness of the secondary layers being selected so that a homogeneous AlInGaN layer that is equivalent, in terms of concentration of aluminum and indium, to the surface layer has a natural lattice parameter different from the lattice parameter of the seed layer.

Method for manufacturing a growth substrate

An optoelectronic semiconductor structure (SC) comprises an active InGaN-based layer disposed between an n-type injection layer and a p-type injection layer, the active p-type injection layer comprising a first InGaN layer and, disposed on the first layer, a second layer composed of a plurality of AlGaInN elemental layers, each elemental layer having a thickness less than its critical relaxation thickness, two successive elemental layers having different aluminum and/or indium and/or gallium compositions.

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Grenoble, France

Mariia Rozhavskaia