This inventor holds 2 USPTO granted patents and 3 published patent applications. Top assignee: Resonac Corporation. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Marie Ohuchi: Innovator in SiC Epitaxial Wafer Technology
Introduction
Marie Ohuchi is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide (SiC) epitaxial wafers. Her innovative work has the potential to enhance the performance of various electronic devices.
Latest Patents
Marie Ohuchi holds a patent for a SiC epitaxial wafer. The objective of her invention is to provide a SiC epitaxial wafer with a large diameter, a thin thickness, and high carrier concentration uniformity. The patented SiC epitaxial wafer includes a SiC substrate with a diameter of 195 mm or more and a thickness of 460 μm or less. Additionally, the SiC epitaxial layer exhibits a carrier concentration variation of 20% or less. This innovation is crucial for improving the efficiency and reliability of semiconductor devices.
Career Highlights
Marie Ohuchi is currently associated with Resonac Corporation, where she continues to advance her research and development efforts in semiconductor technology. Her work has garnered attention for its potential applications in various industries, including automotive and electronics.
Collaborations
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Conclusion
Marie Ohuchi's contributions to the field of SiC epitaxial wafers exemplify her innovative spirit and dedication to advancing semiconductor technology. Her work not only enhances the performance of electronic devices but also paves the way for future advancements in the industry.