Company Filing History:
Years Active: 2018-2021
Title: Marianna Nomann: Innovator in Semiconductor Technology
Introduction
Marianna Nomann is a prominent inventor based in Ruethen, Germany. She has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. Her innovative work has paved the way for advancements in electronic components and systems.
Latest Patents
Among her latest patents is a semiconductor substrate that features a dielectric insulation layer and a first metallization layer. This substrate is designed with a dielectric insulation layer that includes a first material with a thermal conductivity ranging from 25 to 180 W/mK and an insulation strength between 15 and 50 kV/mm. Additionally, it incorporates an electrically conducting or semiconducting second material evenly distributed within the first material. Another notable patent is for a power semiconductor module arrangement, which includes a base plate and a contact element. This arrangement is designed to provide an electrical connection between the inside and outside of a housing, featuring multiple layers that enhance its functionality and efficiency.
Career Highlights
Marianna Nomann is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. Her work at Infineon has allowed her to focus on developing cutting-edge technologies that improve the performance and reliability of electronic devices.
Collaborations
Throughout her career, Marianna has collaborated with notable colleagues, including Elmar Kuehle and Georg Troska. These partnerships have contributed to her success and the advancement of her projects.
Conclusion
Marianna Nomann's contributions to semiconductor technology exemplify her innovative spirit and dedication to her field. Her patents reflect her expertise and commitment to advancing electronic solutions.