Company Filing History:
Years Active: 1993-1994
Title: Maria J Brasil: Innovator in Semiconductor Technology
Introduction
Maria J Brasil is a prominent inventor based in Red Bank, NJ (US). She has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase her innovative spirit and technical expertise.
Latest Patents
Her latest patents focus on semiconductor heterostructures that incorporate capping layers to prevent deleterious effects due to As-P exchange. One of her notable inventions describes a III-V semiconductor heterojunction where a capping layer is formed between two layers of the heterojunction. This capping layer is crucial in preventing adverse interactions when InAlAs is grown on InP, utilizing AlP as the capping layer. Similarly, when GaAs is grown on GaInP, the capping layer used is GaP. These innovations are vital for enhancing the performance and reliability of semiconductor devices.
Career Highlights
Maria J Brasil is currently employed at Bell Communications Research, Inc., where she continues to push the boundaries of semiconductor research. Her work has not only advanced the field but has also paved the way for future innovations in semiconductor technology.
Collaborations
Throughout her career, Maria has collaborated with esteemed colleagues such as Rajaram Bhat and Robert E Nahory. These partnerships have contributed to her success and the advancement of her research.
Conclusion
Maria J Brasil stands out as a leading inventor in the semiconductor industry, with her patents reflecting her commitment to innovation and excellence. Her contributions are shaping the future of semiconductor technology and will have lasting impacts on the field.