The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1994
Filed:
Jun. 04, 1993
Applicant:
Inventors:
Rajaram Bhat, Red Bank, NJ (US);
Maria J Brasil, Red Bank, NJ (US);
Robert E Nahory, Lincroft, NJ (US);
William E Quinn, Boulder, CO (US);
Maria C Tamargo, Plainfield, NJ (US);
Assignee:
Bell Communications Research, Inc., Livingston, NJ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257615 ; 257200 ; 257 22 ; 257190 ;
Abstract
A III-V semiconductor heterojunction in which a capping layer (14) is formed between the two layers (10, 16) of the heterojunction to prevent any deleterious effects due to As-P exchange. When InAlAs is grown on InP, the capping layer is AlP. When GaAs is grown on GaInP, the capping layer is GaP.