Company Filing History:
Years Active: 1993-1994
Title: Maria C. Tamargo: Innovator in Semiconductor Technology
Introduction
Maria C. Tamargo is a prominent inventor based in Plainfield, NJ (US). She has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase her innovative spirit and technical expertise.
Latest Patents
Her latest patents focus on semiconductor heterostructures that incorporate capping layers to prevent deleterious effects due to As-P exchange. One of her notable inventions describes a III-V semiconductor heterojunction where a capping layer is formed between two layers of the heterojunction. This capping layer is crucial in preventing adverse interactions when InAlAs is grown on InP, with AlP serving as the capping layer. Similarly, when GaAs is grown on GaInP, the capping layer is GaP, ensuring the integrity of the semiconductor structure.
Career Highlights
Maria C. Tamargo is currently employed at Bell Communications Research, Inc., where she continues to push the boundaries of semiconductor research. Her work has been instrumental in advancing the understanding and application of semiconductor materials in various technologies.
Collaborations
Throughout her career, Maria has collaborated with esteemed colleagues, including Rajaram Bhat and Maria J. Brasil. These partnerships have fostered a collaborative environment that enhances innovation and research outcomes.
Conclusion
Maria C. Tamargo stands out as a leading figure in semiconductor innovation, with her patents reflecting her commitment to advancing technology. Her contributions continue to influence the field and inspire future innovations.