This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2000.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 834,570 Years Active: 2000
Title: Maria Huffman: Innovator in Sapphire Material Processing
Introduction
Maria Huffman is a notable inventor based in Germantown, MD (US). She has made significant contributions to the field of material processing, particularly in the area of sapphire substrates. Her innovative approach has led to advancements that benefit various industries.
Latest Patents
Maria Huffman holds 1 patent for her invention titled "Fluorine assisted stripping and residue removal in sapphire downstream." This patent describes a method for effectively removing material from a substrate using a plasma generated in a sapphire plasma tube. The process involves introducing at least one fluorine-containing compound into the plasma, along with a forming gas, which is then directed toward the material to be removed from the substrate.
Career Highlights
Throughout her career, Maria has demonstrated a commitment to innovation and excellence in her field. Her work has not only advanced the technology surrounding sapphire processing but has also paved the way for future research and development in this area.
Collaborations
Maria has collaborated with talented individuals such as Palanikumaran Sakthivel and Teresa Zimmerman. These partnerships have fostered a creative environment that encourages the exchange of ideas and expertise.
Conclusion
Maria Huffman's contributions to sapphire material processing exemplify her dedication to innovation and her impact on the industry. Her work continues to inspire future advancements in technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile