Location History:
- Kanagawa, JP (1996)
- Kawasaki, JP (1996)
Company Filing History:
Years Active: 1996
Title: Mari Hodate: Innovator in Semiconductor Technology
Introduction
Mari Hodate is a prominent inventor based in Kanagawa, Japan. She has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of thin film transistors. With a total of 2 patents to her name, Hodate's work has had a substantial impact on the development of advanced electronic devices.
Latest Patents
Hodate's latest patents include a method of manufacturing thin film transistors in a liquid crystal display. This innovative method involves introducing impurities into a semiconductor layer using a gate electrode and a resist film as a mask. The process enhances the efficiency of semiconductor devices by improving the characteristics of thin film transistors. Another notable patent is focused on forming a film and manufacturing a thin film. This patent describes a crystal silicon film deposited on an insulating film, which significantly increases carrier mobility and improves transistor characteristics.
Career Highlights
Throughout her career, Mari Hodate has been associated with Fujitsu Corporation, where she has played a vital role in advancing semiconductor technologies. Her expertise in the field has led to the development of methods that enhance the performance of electronic components, making them more efficient and reliable.
Collaborations
Hodate has collaborated with several talented individuals in her field, including Masahiro Okabe and Tomotaka Matsumoto. These collaborations have fostered innovation and have contributed to the successful development of her patented technologies.
Conclusion
Mari Hodate is a trailblazer in semiconductor technology, with her patents reflecting her commitment to innovation. Her work continues to influence the electronics industry, paving the way for future advancements in technology.