The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1996
Filed:
Jan. 05, 1995
Applicant:
Inventors:
Mari Hodate, Kanagawa, JP;
Norihisa Matsumoto, Kanagawa, JP;
Kohji Ohgata, Kanagawa, JP;
Tamotsu Wada, Kanagawa, JP;
Ken-iti Yanai, Kanagawa, JP;
Ken-ichi Oki, Kanagawa, JP;
Yasuyoshi Mishima, Kanagawa, JP;
Michiko Takei, Kanagawa, JP;
Tatsuya Kakehi, Kanagawa, JP;
Masahiro Okabe, Kanagawa, JP;
Assignee:
Fujitsu Limited, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 41 ; 437 21 ; 437 44 ; 437170 ; 437229 ; 204485 ; 204487 ;
Abstract
A method of manufacturing a semiconductor device according to the present invention includes a process of introducing impurities into a semiconductor layer with a gate electrode and a resist film as a mask after a resist film is formed on the top and the side of the gate electrode by soaking the gate electrode on a semiconductor layer in an electrolyte containing resist and applying voltage to the gate electrode.