Fujitsu Corporation

Mari Hodate

Masahiro Okabe

Junichi Watanabe

Michiko Takei

Yasuyoshi Mishima

Ken-ichi Oki

Kenichi Oki

Yoshio Nagahiro

Jun Inoue

Tamotsu Wada

Teruhiko Ichimura

Tomotaka Matsumoto

Tatsuya Kakehi

Kohji Ohgata

Norihisa Matsumoto

Yuji Murata

Ken-iti Yanai

A method of manufacturing a semiconductor device according to the present invention includes a process of introducing impurities into a semiconductor layer with a gate electrode and a resist film as a mask after a resist film is formed on the top and the side of the gate electrode by soaking the gate electrode on a semiconductor layer in an electrolyte containing resist and applying voltage to the gate electrode.

Method of manufacturing thin film transistors in a liquid crystal display

A crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method has a grain as large as approximately 200 nm. Thus, the mobility of carriers is increased. The crystal silicon thereof is grown within a temperature range of 250.degree. C. to 400.degree. C. Accordingly, when a planar type thin film transistor, an inverted stagger type thin film transistor or a stagger type thin film transistor is formed using crystal silicon formed on these films made of a binary system material, transistor characteristics thereof are improved. Further, when an impurity containing silicon film is formed by a chemical vapor deposition method between a source electrode and a drain electrode of a thin film transistor and a silicon film connected to these electrodes, and a flow rate of impurity containing gas is regulated so that impurity density becomes larger as approaching to the source electrode and the drain electrode, a leakage current in an OFF-state of the transistor is reduced. Since the impurity containing silicon film is grown by a chemical vapor deposition method in this case, the impurity density thereof can be controlled easily and the control accuracy is also improved.

Method for forming a film and method for manufacturing a thin film

Growing community of inventors

Kanagawa, Japan

Mari Hodate