Eindhoven, Netherlands

Marcos H D Guimaraes

This inventor holds 1 USPTO granted patent. Top assignee: Cornell University. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Marcos H D Guimaraes. Retrieved from https://idiyas.com/inventor/marcos-h-d-guimaraes

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations of Marcos H D Guimaraes

Introduction

Marcos H D Guimaraes is a notable inventor based in Eindhoven, Netherlands. He has made significant contributions to the field of materials science, particularly in the development of advanced apparatuses that utilize two-dimensional materials.

Latest Patents

Guimaraes holds a patent for "Apparatuses with atomically-thin ohmic edge contacts between two-dimensional materials, methods of making same, and devices comprising same." This invention includes apparatuses that consist of a substrate, a monolayer graphene film, and a single-layer transition metal dichalcogenide (TMD). The apparatuses feature a one-dimensional ohmic edge contact between the monolayer graphene and monolayer semiconducting TMDs, showcasing innovative methods of making these devices.

Career Highlights

Guimaraes is affiliated with Cornell University, where he continues to advance research in the field of nanotechnology and materials engineering. His work has garnered attention for its potential applications in electronics and other high-tech industries.

Collaborations

Some of his notable coworkers include Jiwoong Park and Hui Gao, who contribute to the collaborative research environment at Cornell University.

Conclusion

Marcos H D Guimaraes is a prominent figure in the realm of innovative materials, with a focus on two-dimensional materials and their applications. His contributions are paving the way for future advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…