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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10910473 B1

PDFFull Text
Date of Patent:
Feb. 02, 2021

Filed:

Jun. 13, 2017

Apparatuses with atomically-thin ohmic edge contacts between two-dimensional materials, methods of making same, and devices comprising same

Applicant:

Cornell University, Ithaca, NY (US);

Inventors:

Jiwoong Park, Chicago, IL (US);

Hui Gao, Brooklyn, NY (US);

Marcos H. D. Guimaraes, Eindhoven, NL;

Daniel C. Ralph, Ithaca, NY (US);

Kibum Kang, Chicago, IL (US);

Saien Xie, Chicago, IL (US);

Assignee:

Cornell University, Ithaca, NY (US);

Attorney:

Hodgson Russ LLP

Primary Examiner:

Xiaoming Liu

Int. Cl.
CPC ...
C23C 14/22 (2006.01); C23C 16/44 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); C23C 16/30 (2006.01); H01L 29/423 (2006.01); H01L 29/267 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); C23C 14/22 (2013.01); C23C 16/305 (2013.01); C23C 16/44 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02527 (2013.01); H01L 21/02568 (2013.01); H01L 29/267 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/778 (2013.01);
Abstract

Apparatuses comprising a substrate; a monolayer graphene film disposed on at least a portion of the substrate; and a single-layer transition metal dichalcogenide (TMD) disposed only on the substrate and lateral edges of the monolayer graphene film, methods of making the apparatuses, and devices comprising one or more of the apparatuses. The apparatuses have a one-dimensional ohmic edge contact between the monolayer graphene and monolayer semiconducting TMDs.

Find Patent Forward Citations

Park, Jiwoong. (2021). Apparatuses with atomically-thin ohmic edge contacts between two-dimensional materials, methods of making same, and devices comprising same (U.S. Patent No. 10910473). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10910473

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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