Munich, Germany

Marco Bäßler

This inventor holds 2 USPTO granted patents and 3 published patent applications. Top assignee: Infineon Technologies Ag. Active years: 2025.

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 1


Company Filing History:


Years Active: 2025

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2 patents (USPTO):Explore Patents

Title: Marco Bäßler: Innovator in Power Semiconductor Technology

Introduction

Marco Bäßler is a prominent inventor based in Munich, Germany. He has made significant contributions to the field of power semiconductor technology. With a total of 2 patents to his name, Bäßler is recognized for his innovative designs that enhance the performance and reliability of power electronics.

Latest Patents

Bäßler's latest patents include a power semiconductor module with vibration dampeners and a power electronics system that incorporates this module. The power semiconductor module features an electrically insulative enclosure housing multiple power semiconductor dies attached to a substrate. It also includes a lead frame or clip frame that connects to the power semiconductor dies, along with contact pins that form an electrical connection interface. Notably, the module is equipped with vibration dampeners that mitigate vibrations at a circuit board without interfering with the electrical operation. Another patent details a power semiconductor package that integrates first and second lead frames, enhancing the efficiency of power semiconductor dies.

Career Highlights

Marco Bäßler is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work focuses on developing advanced power semiconductor technologies that are crucial for various applications in electronics.

Collaborations

Bäßler collaborates with talented professionals in his field, including Ivan Nikitin and Thorsten Scharf. Their combined expertise contributes to the innovative projects at Infineon Technologies AG.

Conclusion

Marco Bäßler is a key figure in the advancement of power semiconductor technology. His patents reflect his commitment to innovation and excellence in the field. His contributions continue to shape the future of power electronics.

Profile summary based on public USPTO records.
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