Palo Alto, CA, United States of America

Marcia Almanza-Workman

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Applied Materials, Inc.. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Marcia Almanza-Workman. Retrieved from https://idiyas.com/inventor/marcia-almanza-workman

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Marcia Almanza-Workman: Innovator in Circuit Fabrication

Introduction

Marcia Almanza-Workman is a notable inventor based in Palo Alto, CA (US). She has made significant contributions to the field of circuit fabrication, particularly through her innovative patent. Her work is recognized for its impact on the development of multilayer circuits.

Latest Patents

Marcia holds a patent for "Multilevel mask circuit fabrication and multilayer circuit." This invention involves a unique method of circuit fabrication that utilizes a multilevel mask to pattern the first conductor layer of a multilayer circuit. The process ensures electrical isolation between the first and second conductor layers, enhancing the functionality and reliability of multilayer circuits.

Career Highlights

Marcia is currently employed at Applied Materials, Inc., where she continues to push the boundaries of innovation in circuit technology. Her expertise and dedication have positioned her as a key player in her field.

Collaborations

Throughout her career, Marcia has collaborated with esteemed colleagues such as Ping Mei and Carl Philip Taussig. These partnerships have fostered a creative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Marcia Almanza-Workman exemplifies the spirit of innovation in the realm of circuit fabrication. Her contributions, particularly her patent, highlight her role as a leading inventor in this critical area of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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