Williston, VT, United States of America

Marcel J Robillard


Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 33(Granted Patents)


Company Filing History:


Years Active: 1996-1997

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2 patents (USPTO):Explore Patents

Title: Innovations by Marcel J Robillard

Introduction

Marcel J Robillard is a notable inventor based in Williston, Vermont, known for his contributions to the field of memory technology. With a total of 2 patents, he has made significant advancements that enhance the functionality and reliability of memory systems.

Latest Patents

Robillard's latest patents include a "Method and apparatus for testing redundant word and bit lines" and a "Method and apparatus for output deselecting of data during test." The first patent focuses on evaluating memory elements and redundant memory elements for redundancy replacement. It involves testing redundant memory elements to determine their functionality and assessing whether there are sufficient good redundant elements available to replace any failing memory elements. The second patent describes a circuit with testing latches that can be used in characterizing or testing memory or logic integrated circuits. This innovation allows for the masking of known 'fail' signals during the testing process.

Career Highlights

Marcel J Robillard is associated with the International Business Machines Corporation (IBM), where he has contributed to various projects that push the boundaries of memory technology. His work has been instrumental in developing methods that improve the testing and reliability of memory systems.

Collaborations

Robillard has collaborated with notable colleagues such as Stuart J Hall and Luigi Termullo, Jr. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in the field.

Conclusion

Marcel J Robillard's contributions to memory technology through his patents and work at IBM highlight his role as a significant inventor in the industry. His innovations continue to influence the development of reliable memory systems.

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