Tokyo, Japan

Makoto Oomiya

This inventor holds 1 USPTO granted patent. Top assignee: Laserfront Technologies, Inc.. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Makoto Oomiya. Retrieved from https://idiyas.com/inventor/makoto-oomiya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: The Innovations of Makoto Oomiya

Introduction

Makoto Oomiya is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for correcting defects on semiconductor substrates.

Latest Patents

Oomiya holds a patent for a "Method and device for correcting pattern film on a semiconductor substrate." This invention addresses the issue of white defects on the surface of substrates. The process involves holding the substrate with the surface facing downward and irradiating laser light upward at the defect while in a material gas. As a result, the white defect is effectively covered with film. He has 1 patent to his name.

Career Highlights

Makoto Oomiya is currently employed at Laserfront Technologies, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in enhancing the quality and reliability of semiconductor devices.

Collaborations

Oomiya collaborates with Yukio Morishige, a fellow innovator in the field. Together, they work on advancing technologies that improve semiconductor manufacturing processes.

Conclusion

Makoto Oomiya's contributions to semiconductor technology exemplify the spirit of innovation. His patented methods are paving the way for advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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