Tokyo, Japan

Majumdar Gourab


Average Co-Inventor Count = 4.6

ph-index = 1

Forward Citations = 57(Granted Patents)


Location History:

  • Fukuoka, JP (1997)
  • Tokyo, JP (2003)

Company Filing History:


Years Active: 1997-2003

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Majumdar Gourab

Introduction

Majumdar Gourab is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to electrical engineering.

Latest Patents

Gourab's latest patents include a semiconductor device having built-in capacitors. This invention features P-electrodes and N-electrodes of a semiconductor device, with capacitors in a plate-like shape or a block-like shape connected to U-phase, V-phase, and W-phase. The design incorporates a switching element and a diode, allowing for miniaturization of the entire electric power converting device, such as an inverter. His second patent is for a semiconductor power module and power conversion device that provides reliable overvoltage protection. This device includes an overvoltage protection mechanism that activates when an overcurrent flows to an IGBT, ensuring the safety and efficiency of the semiconductor module.

Career Highlights

Majumdar Gourab is currently employed at Mitsubishi Electric Corporation, where he continues to develop cutting-edge technologies in the semiconductor field. His work has been instrumental in advancing the capabilities of power conversion devices.

Collaborations

Gourab collaborates with talented coworkers, including Takahiro Hiramoto and Takeshi Tanaka, who contribute to the innovative projects at Mitsubishi Electric Corporation.

Conclusion

Majumdar Gourab's contributions to semiconductor technology reflect his dedication to innovation and excellence. His patents not only enhance the functionality of electrical devices but also pave the way for future advancements in the industry.

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