The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 1997

Filed:

Apr. 18, 1995
Applicant:
Inventors:

Majumdar Gourab, Fukuoka, JP;

Takahiro Hiramoto, Fukuoka, JP;

Takeshi Tanaka, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H / ;
U.S. Cl.
CPC ...
361 79 ; 361 30 ; 361 88 ; 361101 ;
Abstract

A semiconductor power module which provides reliable overvoltage protection including an overvoltage protection device which functions so that when an overcurrent flows to an IGBT (1), a sink transistor (10) turns on and the IGBT (1) turns off accordingly. As the IGBT (1) turns off to cut off the overcurrent, a high surge voltage is applied to the IGBT (1). At this time, however, a clamp current flows trough a clamping circuit including a Zener diode (6), a diode (7) and a resistance (8) and part of it is divided to a transistor (Q11), so that a transistor (Q12) turns on and the sink transistor (10) turns off as the result. Accordingly, the clamp current increases a gate voltage of the IGBT (1). Hence, large part of the load current flows in the IGBT (1), and only a little flows to the clamping circuit. Accordingly, overheat of and damage by burning to the clamping circuit will not be caused even if both the overcurrent and overvoltage are applied.


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