Kamakura Kanagawa, Japan

Mai Shimizu

USPTO Granted Patents = 8 

Average Co-Inventor Count = 4.2

ph-index = 2

Forward Citations = 24(Granted Patents)


Location History:

  • Kanagawa, JP (2019 - 2020)
  • Kamakura Kanagawa, JP (2022 - 2024)

Company Filing History:


Years Active: 2019-2025

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8 patents (USPTO):Explore Patents

Title: Mai Shimizu: Innovator in Semiconductor Technology

Introduction

Mai Shimizu is a prominent inventor based in Kamakura, Kanagawa, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. Her innovative work has advanced the capabilities of semiconductor memory devices and storage solutions.

Latest Patents

Among her latest patents, Mai Shimizu has developed a semiconductor memory device that includes a memory string, a voltage supply circuit, a plurality of control signal lines, a row decoder, and a control circuit. The voltage supply circuit is designed to generate multiple operation voltages, including a negative voltage, to operate the semiconductor memory device effectively. Additionally, she has patented a semiconductor storage device that features first and second memory cells connected to respective bit lines and a common word line. This device optimizes the reading operation by supplying different voltages to the word line based on the selected memory cell.

Career Highlights

Throughout her career, Mai Shimizu has worked with leading companies in the semiconductor industry, including Kioxia Corporation and Toshiba Memory Corporation. Her experience in these organizations has allowed her to refine her skills and contribute to groundbreaking advancements in memory technology.

Collaborations

Mai has collaborated with notable colleagues such as Koji Kato and Yoshihiko Kamata, further enhancing her innovative projects and expanding her professional network.

Conclusion

Mai Shimizu is a trailblazer in semiconductor technology, with a strong portfolio of patents that reflect her expertise and dedication to innovation. Her contributions continue to shape the future of memory devices and storage solutions.

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