The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Nov. 07, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Hideyuki Kataoka, Yokohama Kanagawa, JP;

Yoshinao Suzuki, Yokohama Kanagawa, JP;

Mai Shimizu, Kamakura Kanagawa, JP;

Kazuyoshi Muraoka, Yokohama Kanagawa, JP;

Masami Masuda, Chigasaki Kanagawa, JP;

Yoshikazu Hosomura, Kamakura Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4096 (2006.01); G11C 5/06 (2006.01); G11C 11/4072 (2006.01); G11C 11/4076 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4096 (2013.01); G11C 5/063 (2013.01); G11C 11/4072 (2013.01); G11C 11/4076 (2013.01);
Abstract

A semiconductor memory device comprises a first memory cell and a second memory cell. The semiconductor memory device is configured to be able to perform: a first operation which is a read operation or the like to the first memory cell; and a second operation which is a read operation or the like to the second memory cell. The semiconductor memory device transitions to a standby mode after performing the first operation in response to an input of a first command set and a second command set. The semiconductor memory device performs a charge share operation after the standby mode is released in response to an input of a third command set and a fourth command set during the standby mode. The semiconductor memory device performs the second operation using at least a part of an electric charge generated when the first operation is performed.


Find Patent Forward Citations

Kataoka, Hideyuki. (2026). Semiconductor memory device transitioning to standby mode in between two operations (U.S. Patent No. 12718871). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12718871

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…