Tokyo, Japan

Mai Ogasawara

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Mai Ogasawara: Innovator in Semiconductor Technology

Introduction

Mai Ogasawara is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of semiconductor technology. Her innovative work has led to the development of a unique composite substrate manufacturing method.

Latest Patents

Mai Ogasawara holds 1 patent for her invention titled "Composite substrate manufacturing method, semiconductor element manufacturing method, composite substrate, and semiconductor element." This patent provides a comprehensive method for manufacturing composite substrates, which includes a first raw board deforming step and a joining step to create a composite substrate. The invention is crucial for advancing semiconductor manufacturing processes.

Career Highlights

Throughout her career, Mai Ogasawara has worked with notable companies, including Namiki Seimitsu Houseki Kabushiki Kaisha and Disco Corporation. Her experience in these organizations has allowed her to refine her skills and contribute to groundbreaking innovations in the semiconductor industry.

Collaborations

Mai has collaborated with esteemed colleagues such as Hideo Aida and Natsuko Aota. These partnerships have fostered a creative environment that has led to significant advancements in their respective fields.

Conclusion

Mai Ogasawara's contributions to semiconductor technology through her innovative patent and collaborative efforts highlight her as a key figure in the industry. Her work continues to influence the future of semiconductor manufacturing.

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