Hyderabad Telangana, India

Madhukar Reddy N

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Qualcomm Incorporated. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Madhukar Reddy N. Retrieved from https://idiyas.com/inventor/madhukar-reddy-n

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations by Madhukar Reddy N in Memory Device Technology

Introduction

Madhukar Reddy N is an accomplished inventor based in Hyderabad, Telangana, India. He has made significant contributions to the field of memory device technology, particularly in reducing access latency in memory systems.

Latest Patents

Madhukar holds a patent for "Batching aware techniques for refreshing memory devices." This patent focuses on techniques and procedures aimed at minimizing memory access latency, specifically in DRAM systems. The innovation involves a memory refresh scheduling algorithm that considers memory access batching, allowing for more efficient scheduling of refreshes during write batches. This approach effectively reduces read access latency by limiting the number of refreshes during memory read operations. Additionally, the techniques can be adapted to decrease write latency, showcasing the versatility of his invention.

Career Highlights

Madhukar Reddy N is currently employed at Qualcomm Incorporated, a leading company in the technology sector. His work at Qualcomm emphasizes the importance of innovation in memory technology, contributing to advancements that enhance the performance of electronic devices.

Collaborations

Throughout his career, Madhukar has collaborated with notable colleagues, including Saurabh Sethi and Vasantha Kumar Bandur Puttappa. These collaborations have fostered a creative environment that encourages the development of cutting-edge technologies in the field of memory devices.

Conclusion

Madhukar Reddy N's contributions to

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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