Mesa, AZ, United States of America

M Lee Love, Jr

This inventor holds 1 USPTO granted patent. Top assignee: Olin Microelectronic Chemicals, Inc.. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: M Lee Love, Jr. Retrieved from https://idiyas.com/inventor/m-lee-love-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 35(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: M Lee Love, Jr. - Innovator in Semiconductor Technology

Introduction

M Lee Love, Jr. is a notable inventor based in Mesa, AZ (US). He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique process that addresses challenges in the semiconductor industry.

Latest Patents

M Lee Love, Jr. holds a patent for a "Process for removing residues from a semiconductor substrate." This patent outlines a method for treating a substrate that has photoresist applied to it. The process involves specific steps designed to enhance the efficiency of semiconductor manufacturing.

Career Highlights

M Lee Love, Jr. is currently employed at Olin Microelectronic Chemicals, Inc. His work at this company has allowed him to focus on advancing semiconductor technologies. His expertise in this area has positioned him as a valuable asset in the industry.

Collaborations

M Lee Love, Jr. has collaborated with Kenji Honda, further enhancing his work in semiconductor processes. Their partnership has contributed to the development of innovative solutions in the field.

Conclusion

M Lee Love, Jr. is a distinguished inventor whose work in semiconductor technology has made a lasting impact. His patent and career at Olin Microelectronic Chemicals, Inc. reflect his dedication to innovation in this critical industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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