Gyeonggi-do, South Korea

Lynn Lee

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Skhynix Inc.. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lynn Lee. Retrieved from https://idiyas.com/inventor/lynn-lee-qevmcmgf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 50.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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2 patents (USPTO):Explore Patents

Title: Lynn Lee - Innovator in Semiconductor Technology

Introduction

Lynn Lee is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and methods.

Latest Patents

Lynn Lee holds 1 patent for a semiconductor device and method for fabricating the same. This invention relates to a semiconductor device that includes a capacitor. The device comprises a lower electrode, a supporter that supports the outer wall of the lower electrode, a dielectric layer formed over both the lower electrode and the supporter, an upper electrode on the dielectric layer, and a dielectric booster layer selectively formed on the surface of the lower electrode.

Career Highlights

Lynn Lee is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His work focuses on advancing semiconductor device technology, which is crucial for various electronic applications.

Collaborations

Lynn has collaborated with several talented individuals in his field, including Wan Joo Maeng and Jae Hee Song. Their teamwork has contributed to the successful development of innovative semiconductor solutions.

Conclusion

Lynn Lee's contributions to semiconductor technology exemplify the importance of innovation in the electronics industry. His patent and collaborations highlight his commitment to advancing technology and improving device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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