The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Feb. 04, 2022
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Lynn Lee, Gyeonggi-do, KR;
Wan Joo Maeng, Gyeonggi-do, KR;
Jae Hee Song, Gyeonggi-do, KR;
Ki Vin Im, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H10D 1/00 (2025.01);
U.S. Cl.
CPC ...
H10D 1/696 (2025.01); H10D 1/042 (2025.01); H10D 1/043 (2025.01); H10D 1/716 (2025.01);
Abstract
The present invention relates to a semiconductor device having a capacitor and a method for fabricating the same. A semiconductor device may comprise: a lower electrode; a supporter supporting an outer wall of the lower electrode; a dielectric layer formed over the lower electrode and the supporter; an upper electrode formed on the dielectric layer; and a dielectric booster layer disposed between the lower electrode and the dielectric layer, and selectively formed on a surface of the lower electrode.