Location History:
- Ansan-si, KR (2019 - 2021)
- Gyeonggi-do, KR (2024)
Company Filing History:
Years Active: 2019-2024
Title: Innovations of Inventor Lynn Lee
Introduction
Lynn Lee is a notable inventor based in Ansan-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on advanced methods for manufacturing semiconductor layers and devices.
Latest Patents
Lynn Lee's latest patents include a method for manufacturing a single-crystal semiconductor layer, a structure comprising a single-crystal semiconductor layer, and a semiconductor device that incorporates this structure. The method involves performing a unit cycle multiple times, which includes a metal precursor pressurized dosing operation, a metal precursor purge operation, a reactive gas supplying operation, and a reactive gas purge operation. This innovative approach enhances the efficiency and quality of single-crystal semiconductor layers.
Career Highlights
Lynn Lee is affiliated with the Industry-University Cooperation Foundation at Hanyang University. His work has been instrumental in advancing semiconductor manufacturing techniques, contributing to the development of high-performance electronic devices.
Collaborations
Lynn Lee collaborates with esteemed colleagues, including Myung Mo Sung and Jin Won Jung, who contribute to his research and development efforts in the semiconductor field.
Conclusion
Lynn Lee's innovative work in semiconductor technology showcases his expertise and commitment to advancing the industry. His patents reflect a deep understanding of manufacturing processes that are crucial for the future of electronics.