Industry-University Cooperation Foundation Hanyang University

Lynn Lee

Myung Mo Sung

Jin Won Jung

Hong Ro Yoon

Jong Chan Kim

Jang Mi Baek

Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.

Method for manufacturing single-crystal semiconductor layer, structure comprising single-crystal semiconductor layer, and semiconductor device comprising structure

A barrier according to an embodiment of the present invention is provided. The barrier includes a polymer configured of a plurality of first atoms; and an inorganic material configured of a plurality of second atoms and coexisting with the organic material, wherein an atomic planar density defined by the number of atoms per cmof the first atoms and the second atoms exceeds 1.9&#xd7;10atoms/cm.

Barrier, barrier manufacturing method, display including barrier, and method of manufacturing display including barrier

A method for manufacturing a perovskite crystal structure includes preparing a substrate, disposing a stamp having a roll shape on the substrate, injecting a perovskite precursor solution between the substrate and the stamp, and drying the precursor solution to manufacture a perovskite crystal structure. The stamp rolls in a first direction on the substrate, and the precursor solution is continuously crystallized in the first direction between the substrate and the stamp to manufacture the perovskite crystal structure.

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Ansan-si, South Korea

Lynn Lee