Luo-Hsin Lee

Title: Innovations of Luo-Hsin Lee

Introduction

Luo-Hsin Lee is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative methods for forming semiconductor devices, which are crucial for modern electronics.

Latest Patents

One of his latest patents describes a method of forming a semiconductor device. This process begins with providing a substrate and forming a dielectric layer on it. Subsequently, at least one trench is created in the dielectric layer to partially expose the top surface of the substrate. The trench features a discontinuous sidewall with a turning portion. A first deposition process is then performed to deposit a first semiconductor layer, filling the trench and covering the top surface of the dielectric layer. Following this, the first semiconductor layer is laterally etched to partially remove it until the turning portion of the trench is exposed. Finally, a second deposition is conducted to deposit a second semiconductor layer to fill the trench.

Career Highlights

Luo-Hsin Lee has worked with notable companies in the semiconductor industry, including United Microelectronics Corporation and Fujian Jinhua Integrated Circuit Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor device innovation.

Collaborations

Throughout his career, Luo-Hsin Lee has collaborated with several professionals in the field, including Ting-Pang Chung and Shih-Han Hung. These collaborations have further enhanced his contributions to semiconductor technology.

Conclusion

Luo-Hsin Lee's innovative work in semiconductor devices showcases his expertise and commitment to advancing technology. His patents reflect significant advancements in the field, making him a noteworthy inventor in the industry.