Company Filing History:
Years Active: 2021
Title: Innovations of Lun-Ming Lee
Introduction
Lun-Ming Lee is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
One of Lun-Ming Lee's notable patents is titled "Source/drain contact with 2-D material." This patent describes a semiconductor device that includes a substrate, a semiconductor 2-D material layer, a conductive 2-D material layer, a gate dielectric layer, and a gate electrode. The semiconductor 2-D material layer is positioned over the substrate, while the conductive 2-D material layer extends along a source/drain region of the semiconductor 2-D material layer. This conductive layer comprises a group-IV element, which plays a crucial role in the device's functionality. The gate dielectric layer extends along the channel region of the semiconductor 2-D material layer, and the gate electrode is situated over the gate dielectric layer. Lun-Ming Lee holds 1 patent in this area.
Career Highlights
Throughout his career, Lun-Ming Lee has worked with leading organizations in the semiconductor industry. He has been associated with Taiwan Semiconductor Manufacturing Company Ltd. and National Taiwan University, where he has contributed to various research and development projects. His expertise in semiconductor technology has made him a valuable asset in these institutions.
Collaborations
Lun-Ming Lee has collaborated with several talented individuals in his field. Notable coworkers include Shih-Yen Lin and Kuan-Chao Chen, who have worked alongside him on various projects and research initiatives.
Conclusion
Lun-Ming Lee's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence advancements in semiconductor devices, showcasing the impact of his inventions on modern technology.