Company Filing History:
Years Active: 2010-2015
Title: Innovations of Lukas Tlustos in Radiation Monitoring Technology
Introduction
Lukas Tlustos is an accomplished inventor based in Geneva, Switzerland. He has made significant contributions to the field of radiation monitoring technology, holding a total of 3 patents. His work focuses on developing advanced devices that enhance the detection and measurement of radiation characteristics.
Latest Patents
One of his notable inventions is a radiation monitoring device designed to measure various characteristics of radiation. This device includes multiple detector pixels, a clock pulse generator, and pixel electronics that process electrical signals generated by radiation events. The system is capable of counting the number of clock pulses during specific time intervals, providing precise measurements of radiation exposure.
Another significant patent is the pixilated radiation sensing device, which is subdivided into N*M pixels. This device converts impinging radiation into electrical signals and features a processing part with multiple counters for each pixel. The arbitration circuit allocates detection values based on information from the pixel and its neighbors, ensuring accurate radiation detection.
Career Highlights
Lukas Tlustos has worked with prestigious organizations such as the European Organization for Nuclear Research (CERN). His experience in these research institutions has allowed him to develop cutting-edge technologies in radiation detection and monitoring.
Collaborations
Throughout his career, Tlustos has collaborated with notable professionals, including Michael Campbell and Winnie Sze-Wing Wong. These partnerships have contributed to the advancement of his innovative projects and patents.
Conclusion
Lukas Tlustos is a prominent figure in the field of radiation monitoring technology, with a focus on developing sophisticated devices that improve detection accuracy. His contributions through patents and collaborations highlight his commitment to innovation in this critical area.
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