Hannut, Belgium

Ludovic Raymond Andre Goux

This inventor holds 1 USPTO granted patent. Top assignee: Nxp B.v.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ludovic Raymond Andre Goux. Retrieved from https://idiyas.com/inventor/ludovic-raymond-andre-goux

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 32(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Ludovic Raymond Andre Goux and Vertical Phase-Change Memory

Introduction

Ludovic Raymond Andre Goux is an inventor associated with Hannut, Belgium, and NXP B.V. His listed patent work concerns the design and manufacture of vertical phase-change-memory cells.

Latest Patents

Goux is associated with 1 patent: “Vertical Phase Change Memory Cell and Methods for Manufacturing Thereof.” The invention describes a vertical phase-change-memory (PCM) cell with a bottom electrode contacting a first phase-change-material layer. A dielectric layer contains an opening through which a second phase-change-material layer contacts the first, while a top electrode contacts the second layer. The disclosed structure and manufacturing methods relate to the arrangement of these components in a vertical memory cell.

Career Highlights

Goux’s listed patent is connected to NXP B.V. and focuses on phase-change memory technology. The patent describes a cell architecture that uses vertically arranged materials and electrodes.

Collaborations

The provided information names Thomas Gille and Judit Gloria Lisoni Reyes as Goux’s coworkers. Their inclusion indicates professional connections, but the available details do not specify their roles in the patent.

Conclusion

Ludovic Raymond Andre Goux’s listed invention addresses the structure and manufacture of a vertical phase-change-memory cell, reflecting his patent-related work associated with NXP B.V.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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