The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Dec. 12, 2006
Ludovic Raymond Andre Goux, Hannut, BE;
Dirk Johan Cecil Christiaan Marie Wouters, Heverlee, BE;
Judit Gloria Lisoni Reyes, Oud-Heverlee, BE;
Thomas Gille, Leuven, BE;
Ludovic Raymond Andre Goux, Hannut, BE;
Dirk Johan Cecil Christiaan Marie Wouters, Heverlee, BE;
Judit Gloria Lisoni Reyes, Oud-Heverlee, BE;
Thomas Gille, Leuven, BE;
NXP B.V., Eindhoven, NL;
Abstract
The present invention discloses a vertical phase-change-memory (PCM) cell, comprising a stack of a bottom electrode () contacting a first layer of phase change material (), a dielectric layer () having an opening (), a second layer of phase change material () in contact with the first layer of phase change material through the opening in the dielectric layer and a top electrode () contacting this second layer of phase change material.