Lonne L Mays

Title: Lonne L Mays: Innovator in Semiconductor Technology

Introduction

Lonne L Mays is a notable inventor based in Gilbert, AZ (US), recognized for his contributions to semiconductor technology. With a total of 5 patents to his name, Mays has made significant advancements in the field, particularly in methods that enhance the performance and reliability of semiconductor substrates.

Latest Patents

One of Mays' latest patents is a method of passivating a semiconductor substrate. This innovative method involves singulating a semiconductor substrate from a semiconductor wafer, coupling a heatsink to the substrate, etching the substrate in an etch tool chamber, and passivating it with an oxide layer. Notably, the etching process does not substantially affect the heatsink, ensuring that the integrity of the heatsink is maintained throughout the process. Another significant patent is for an electronic package that features outermost surfaces forming a polygon shape, with a body that exhibits axial symmetry. This design allows for a lead to exit the package along the axis, enhancing the functionality of the electronic package.

Career Highlights

Lonne L Mays has built a successful career at Motorola Corporation, where he has been instrumental in developing cutting-edge technologies. His work has not only contributed to the company's reputation as a leader in the electronics industry but has also paved the way for future innovations in semiconductor applications.

Collaborations

Throughout his career, Mays has collaborated with talented individuals such as Hiep M Le and Mark D Mosher. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Lonne L Mays stands out as a prominent figure in the semiconductor industry, with a strong portfolio of patents that reflect his innovative spirit and technical expertise. His contributions continue to influence the field and inspire future advancements in technology.