Chengdu, China

Longfei Liang

This inventor holds 2 USPTO granted patents. Top assignee: University of Electronic Science and Technology of China. Active years: 2021-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Longfei Liang. Retrieved from https://idiyas.com/inventor/longfei-liang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 5.5

ph-index = 1


Company Filing History:


Years Active: 2021-2022

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2 patents (USPTO):Explore Patents

Title: **Innovator Profile: Longfei Liang**

Introduction

Longfei Liang is a prominent inventor based in Chengdu, China, who has made significant contributions to the field of power semiconductor devices. With two patents to his name, Liang is recognized for his innovative solutions that address pressing technological challenges in electronic devices.

Latest Patents

Liang's latest inventions showcase his expertise in power semiconductor technology. His first patent covers "Power semiconductor devices with low specific on-resistance." This invention integrates a power device with a transient voltage suppressor (TVS), strategically designed to achieve low specific on-resistance. The configuration includes critical components such as gate, drain, bulk, source electrodes, and a parasitic body diode.

The second patent, titled "High voltage ESD protection device," details a sophisticated high voltage Electrostatic Discharge (ESD) protection mechanism. This device is designed using a P-type substrate along with various regions like the NWELL and contact areas to ensure robust protection against ESD events, thereby enhancing the reliability of electronic devices.

Career Highlights

Longfei Liang is associated with the University of Electronic Science and Technology of China, where he conducts research and fosters innovation in semiconductor technologies. His academic background and hands-on experience enable him to bridge the gap between theoretical concepts and practical applications.

Collaborations

In his research endeavors, Liang collaborates with esteemed colleagues, including Ming Qiao and Zhao Qi. Their collective expertise contributes to the development of cutting-edge technologies that may reshape the electronic landscape.

Conclusion

Longfei Liang's work exemplifies the spirit of innovation within the semiconductor industry. Through his patents and collaborations, he continues to pave the way for advancements that enhance the efficiency and reliability of electronic devices. As he progresses in his career, the impact of his inventions may lead to even greater developments in technology in the years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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