The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Jun. 25, 2018
Applicant:

University of Electronic Science and Technology of China, Chengdu, CN;

Inventors:

Ming Qiao, Chengdu, CN;

Zhao Qi, Chengdu, CN;

Jiamu Xiao, Chengdu, CN;

Longfei Liang, Chengdu, CN;

Danye Liang, Chengdu, CN;

Bo Zhang, Chengdu, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0277 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/7816 (2013.01);
Abstract

The present invention provides a high voltage ESD protection device including a P-type substrate; a first NWELL region located on the left of the upper part of the P-type substrate; an NP contact region located on the upper part of the first NWELL region; an N+ contact region located on the right of the upper part of the P-type substrate apart from the first NWELL region; a P+ contact region tangential to the right side of the N+ contact region; a NTOP layer arranged on the right of the NP contact region inside the first NWELL region. The NP contact region is connected to a metal piece to form a metal anode. The N+ contact region and the P+ contact region are connected by a metal piece to form a metal cathode.


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