Xiamen, China

Long Wang

This inventor holds 1 USPTO granted patent. Top assignee: United Semiconductor (Xiamen) Co., Ltd.. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Long Wang. Retrieved from https://idiyas.com/inventor/long-wang-38d7233o

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Long Wang - Innovator in Semiconductor Fabrication

Introduction

Long Wang is a prominent inventor based in Xiamen, China. He has made significant contributions to the field of semiconductor technology. His innovative methods have paved the way for advancements in device fabrication.

Latest Patents

Long Wang holds a patent for a method of fabricating a semiconductor device. This method includes the creation of both high-voltage and low-voltage device regions. The process involves several steps, including providing a substrate with a bottom and top mask layer, forming a doped region based on a layout pattern, and patterning the substrate to create trenches in the respective device regions. The top mask layer is then patterned to expose the bottom mask layer, utilizing a Boolean operation to generate the necessary layout patterns.

Career Highlights

Long Wang is associated with United Semiconductor (Xiamen) Co., Ltd. His work at this company has been instrumental in developing advanced semiconductor technologies. He has demonstrated a strong commitment to innovation and excellence in his field.

Collaborations

Long Wang has collaborated with notable colleagues, including Zijun Sun and Chin-Chun Huang. These partnerships have contributed to the success of various projects and advancements in semiconductor fabrication.

Conclusion

Long Wang's contributions to semiconductor technology exemplify the spirit of innovation. His patent and collaborative efforts highlight his role as a key figure in the industry. His work continues to influence the future of semiconductor device fabrication.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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