Liz Poliak

Title: Liz Poliak: Innovator in GaN Sensor Technology

Introduction

Liz Poliak is a prominent inventor based in Nesher, Israel, known for her contributions to the field of semiconductor technology. With a focus on Gallium Nitride (GaN) sensors, she has developed innovative methods that enhance the performance and reliability of these devices. Her work has led to the filing of two patents, showcasing her expertise and commitment to advancing technology.

Latest Patents

Liz Poliak's latest patents include a method of forming a GaN sensor that features a controlled and stable threshold voltage in the sensing area. This method involves several intricate steps, such as forming a gate dielectric layer over a GaN hetero-structure, etching the gate dielectric layer and the first barrier layer, and thermally activating the metal layer in the source and drain contact openings. The process is designed to ensure that the gate dielectric exhibits a sloped profile, and dielectric spacers may be formed to enhance the sensor's performance.

Career Highlights

Poliak is currently employed at Tower Semiconductor Ltd., where she continues to push the boundaries of semiconductor technology. Her work at Tower Semiconductor has positioned her as a key player in the development of advanced GaN-based sensors, contributing to the company's reputation for innovation in the semiconductor industry.

Collaborations

Throughout her career, Liz has collaborated with notable colleagues, including Ruth Shima-Edelstein and Ronen Shaul. These collaborations have allowed her to share knowledge and expertise, further enhancing the impact of her work in the field.

Conclusion

Liz Poliak's innovative contributions to GaN sensor technology exemplify her dedication to advancing the semiconductor industry. Her patents and work at Tower Semiconductor Ltd. highlight her role as a leading inventor in this critical field.