Tower Semiconductor Ltd.

Liz Poliak

Yakov Roizin

Ruth Shima-Edelstein

Anatoly Sergienko

Alex Sirkis

Roy Strul

Ronen Shaul

Ido Gilad

A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings. The gate dielectric may exhibit a sloped profile, and dielectric spacers may be formed.

Method of forming a GaN sensor having a controlled and stable threshold voltage in the sensing area

Method of forming a GaN sensor having a controlled and stable threshold voltage

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Nesher, Israel

Liz Poliak