Lausanne, Switzerland

Livio Lattanzio


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Innovations in Semiconductor Technology by Livio Lattanzio

Introduction: Livio Lattanzio, an accomplished inventor based in Lausanne, Switzerland, has made significant strides in the field of semiconductor technology. With a patent to his name, Lattanzio's work showcases his dedication to advancing innovations that enhance electronic devices and systems.

Latest Patents: Lattanzio holds a patent for a Semiconductor Tunneling Device. This invention encompasses a semiconductor tunneling Field-Effect device designed with a source, a drain, and at least one elongated semiconductor structure. The device features a first gate and a second gate, strategically positioned on opposing sides of the elongated semiconductor structure. These gates define an overlap zone that is critical for the device's functionality, allowing improved performance in electronic applications.

Career Highlights: Lattanzio's expertise and contributions to the semiconductor field have established him as a reputable figure in the research community. Throughout his career, he has demonstrated a commitment to innovation, staying at the forefront of technological advancements.

Collaborations: Working at the renowned École Polytechnique Fédérale de Lausanne (EPFL), Lattanzio collaborates with talented colleagues such as Cem Alper and Mihai Adrian Ionescu. These partnerships enable the exchange of ideas and foster an environment conducive to groundbreaking research.

Conclusion: Livio Lattanzio's work in the semiconductor industry exemplifies the spirit of innovation. His patent for the Semiconductor Tunneling Device reflects his commitment to pushing the boundaries of technology. As he continues to collaborate with fellow researchers, Lattanzio remains a valuable contributor to advancements in the semiconductor field.

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