Liuqun Xie

Title: Liuqun Xie: Innovator in Three-Dimensional Memory Devices

Introduction

Liuqun Xie is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory technology, particularly in the development of three-dimensional memory devices. With a total of 2 patents, his work is paving the way for advancements in data storage solutions.

Latest Patents

Liuqun Xie's latest patents include innovative methods for forming three-dimensional memory devices. One of his notable inventions describes a memory device that features adjoined source contact structures. This invention involves the formation of a plurality of holes extending vertically in a dielectric deck, which includes interleaved sacrificial layers and dielectric layers over a substrate. The process includes the creation of a slit opening aligned with the sacrificial source contact structures, allowing for the formation of a memory stack through the introduction of conductor layers. Another patent outlines the structure and methods for forming a memory device that includes a substrate, a stack above it, and a channel structure, showcasing the complexity and ingenuity of his designs.

Career Highlights

Liuqun Xie is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and effective for modern applications.

Collaborations

Liuqun has collaborated with notable coworkers such as Lu Zhang and Zhipeng Wu. Their combined expertise contributes to the innovative environment at Yangtze Memory Technologies Co., Ltd.

Conclusion

Liuqun Xie's contributions to the field of memory technology are significant and impactful. His innovative patents and collaborative efforts are shaping the future of data storage solutions.